Atmospheric Plasma
Deposition of N-type Zinc Oxide for Thin Film Photovoltaics
Robert F. Hicks
04-05
EISG Project
Title: Atmospheric Plasma Deposition of N-type Zinc Oxide for Thin Film Photovoltaics
EISG Grant Number: 04-05
PIER Area: Renewable Energy Technologies
Principal Investigator: Robert F. Hicks
Contact Information: Phone:
(310) 206-6865, email: rhicks@ucla.edu
Organization: University of California, Los Angeles
Grant Amount: $75,000
Grant Term: 12 Months
Project Description:
§ Proposes to research the feasibility of developing a new, lower cost process for depositing thin-film solar cells. An atmospheric tool will be used to deposit n-type zinc oxide films. The optical and electronic properties of the zinc oxide will exceed that of indium tin oxide, the transparent conduction layer currently used in thin-film photovoltaic devices.
Proposed Outcomes:
§ A novel atmospheric plasma deposition process will be used to fabricate n-type zinc oxide films. The zinc oxide films will be thoroughly characterized for their chemical, physical, optical and electronic properties.
Anticipated Benefits:
§ Potential to assist in decreasing photovoltaic module costs from $3/Watt to ~$1/Watt by improving cell efficiency and at the same time lowering manufacturing costs.
§ Potential to reduce the cost of thin film materials from $44/m2 to $33/m2.
§ Proposed technology may reduce TCO cost from $6/m2 to about $2/m2.which would be used in place of indium tin oxide, the transparent conduction layer currently used in thin-film photovoltaic devices.
o Full Project Summary
o Statement of Work
o Current Status