Short Summary
Single Crystal
Silicon Sheet Growth
Carl Bleil
00-02
EISG Project Title: Single Crystal Silicon Sheet Growth
EISG Grant Number: 00-02
PIER Area: Renewable Energy Technology
Principal Investigator: Carl Bleil
Contact Information: (248) 370-3406 bleil@oakland.edu
Organization: Energy Materials Research
Grant Amount: $75,000
Grant Term: 18 months
Project Description:
The purpose of this project is to research the feasibility of producing single crystal sheets of semiconductor quality silicon directly from a polycrystalline source at a minimum production rate of 35 cm/min up to maximum of 350 cm/min using an advanced Horizontal Ribbon Growth method.
Proposed Outcomes:
· Prototype Horizontal Ribbon Growth processor.
· Production methodology.
· Technical and economic feasibility analysis of proposed methodology.
Anticipated Benefits:
· 50% reduction in the energy consumed to produce quality silicon sheet.
· 40% reduction in the material losses associated with producing single crystal sheets.
· Potential 50% capital cost reduction of electronic grade silicon sheets.